| PART |
Description |
Maker |
| MC-4216LFC721FH-A60 |
16M X 72 EDO DRAM MODULE, 60 ns, PDMA168
|
|
| M53231600CJ0-C50 |
16M X 32 EDO DRAM MODULE, 50 ns, SMA72
|
|
| HYM72V1005GU-60 HYM72V1005GU-50 HYM64V1005GU-60 HY |
1M x 72 Bit ECC DRAM Module unbuffered
1M x 64 Bit DRAM Module unbuffered
From old datasheet system
3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HYM364025GS-60 HYM364025GS-50 HYM364025S-60 HYM364 |
4M x 36-Bit EDO - DRAM Module 4米36位EDO公司-记忆体模
4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 50 ns, SMA72
4M x 36 Bit EDO DRAM Module with Parity
|
INFINEON TECHNOLOGIES AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HYB3165405BTL-60 HYB3165405BTL-50 HYB3165405BTL-40 |
16M x 4 Bit 4k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HB56SW3272ESK HB56SW3272ESK-6 HB56SW3272ESK-5 |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| HYM72V8005GU-60 HYM72V8005GU-50 HYM64V8005GU-60 HY |
3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module
3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module 8M X 72 EDO DRAM MODULE, 50 ns, DMA168
3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module 8M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module 8M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| MSC2313258D-XXDS2 MSC2313258D-XXBS2 MSC2313258D MS |
From old datasheet system
1M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72
1,048,576-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO 1,048,576字32位动态随机存储器模块：快速页面模式型与江
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
Oki Electric Industry Co., Ltd.
|
| AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
5V 256KX16 CMOS DRAM (EDO)
5V 256K?6 CMOS DRAM (EDO)
x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO)
5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation
ALSC
|
